Microwave Surface Resistance of Reactively Sputtered NbN Thin Films
نویسنده
چکیده
The surface resistance of niobium nitride {NbN) thin films has been measured at 7. 78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TEo] 1 mode of a lead-plated copper cavity where the NbN served as one end-cap of the cavity.
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تاریخ انتشار 2004